- Product Model FDMD84100
- Brand Sanyo Semiconductor/onsemi
- RoHS Yes
- Description MOSFET 2N-CH 100V 7A POWER 3.3X5
- Categories Массивы полевых транзисторов, МОП-транзисторов
- In Stock 4844
Technical Details
- Package / Case 8-PowerWDFN
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual) Common Source
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 2.1W
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 7A
- Input Capacitance (Ciss) (Max) @ Vds 980pF @ 50V
- Rds On (Max) @ Id, Vgs 20mOhm @ 7A, 10V
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package Power 3.3x5
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
Related Products
MOSFET 2N-CH 30V 27A 8VSON
In Stock: 1455
GANFET 2N-CH 100V 5A DIE
In Stock: 5088
MOSFET 2N-CH 100V 10A 8PWR 5X6
In Stock: 1107
MOSFET 2N-CH 100V 2.7A 8SOIC
In Stock: 20725
MOSFET 2N-CH 60V 30A PPAK SO8
In Stock: 10212
