- Product Model TPC8408,LQ(S
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N/P-CH 40V 6.1A/5.3A 8SOP
- Categories Массивы полевых транзисторов, МОП-транзисторов
-
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- In Stock 2488
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 450mW
- Drain to Source Voltage (Vdss) 40V
- Current - Continuous Drain (Id) @ 25°C 6.1A, 5.3A
- Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
- Rds On (Max) @ Id, Vgs 32mOhm @ 3.1A, 10V
- Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.3V @ 100µA
- Supplier Device Package 8-SOP
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant
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