- Product Model SSM6K211FE,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 20V 3.2A ES6
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 0
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 3.2A (Ta)
- Rds On (Max) @ Id, Vgs 47mOhm @ 2A, 4.5V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V
- Vgs (Max) ±10V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 10.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


