- Product Model TK100S04N1L,LXHQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET N-CH 40V 100A DPAK
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 2594
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 100A (Ta)
- Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
- Power Dissipation (Max) 180W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 500µA
- Supplier Device Package DPAK+
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5490 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


