- Product Model SSM3J352F,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET P-CH 20V 2A S-MINI
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 7700
Technical Details
- Package / Case TO-236-3, SC-59, SOT-23-3
- Mounting Type Surface Mount
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 2A (Ta)
- Rds On (Max) @ Id, Vgs 110mOhm @ 2A, 10V
- Power Dissipation (Max) 1.2W (Ta)
- Vgs(th) (Max) @ Id 1.2V @ 1mA
- Supplier Device Package S-Mini
- Drive Voltage (Max Rds On, Min Rds On) 1.8V, 10V
- Vgs (Max) ±12V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 210 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


