- Product Model TPN2R805PL,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 45V 80A 8TSON
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 4778
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Rds On (Max) @ Id, Vgs 2.8mOhm @ 40A, 10V
- Power Dissipation (Max) 2.67W (Ta), 104W (Tc)
- Vgs(th) (Max) @ Id 2.4V @ 300µA
- Supplier Device Package 8-TSON Advance (3.1x3.1)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 45 V
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 22.5 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant


