- Product Model A2G35S200-01SR3
- Brand NXP Semiconductors
- RoHS Yes
- Description RF MOSFET GAN HEMT 48V NI400
- Categories РЧ полевые транзисторы, МОП-транзисторы
-
PDF
- In Stock 77
Technical Details
- Package / Case NI-400S-2S
- Mounting Type Surface Mount
- Frequency 3.4GHz ~ 3.6GHz
- Power - Output 180W
- Gain 16.1dB
- Technology GaN HEMT
- Supplier Device Package NI-400S-2S
- Voltage - Rated 125 V
- Voltage - Test 48 V
- Current - Test 291 mA
- ECCN DISC 3A001B3
- HTSUS 8541.29.0075
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


