- Product Model TK10A80W,S4X
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N-CH 800V 9.5A TO220SIS
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 49
Technical Details
- Package / Case TO-220-3 Full Pack
- Mounting Type Through Hole
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 9.5A (Ta)
- Rds On (Max) @ Id, Vgs 550mOhm @ 4.8A, 10V
- Power Dissipation (Max) 40W (Tc)
- Vgs(th) (Max) @ Id 4V @ 450µA
- Supplier Device Package TO-220SIS
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 800 V
- Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1150 pF @ 300 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- RoHS Status ROHS3 Compliant


