- Product Model TT8J11TCR
- Brand ROHM Semiconductor
- RoHS Yes
- Description MOSFET 2P-CH 12V 3.5A 8TSST
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 2589
Technical Details
- Package / Case 8-SMD, Flat Lead
- Mounting Type Surface Mount
- Configuration 2 P-Channel (Dual)
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 650mW
- Drain to Source Voltage (Vdss) 12V
- Current - Continuous Drain (Id) @ 25°C 3.5A
- Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 6V
- Rds On (Max) @ Id, Vgs 43mOhm @ 3.5A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 22nC @ 4.5V
- FET Feature Logic Level Gate, 1.5V Drive
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package 8-TSST
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


