- Product Model TPH8R80ANH,L1Q
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N CH 100V 32A 8-SOP
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 29404
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 32A (Tc)
- Rds On (Max) @ Id, Vgs 8.8mOhm @ 16A, 10V
- Power Dissipation (Max) 1.6W (Ta), 61W (Tc)
- Vgs(th) (Max) @ Id 4V @ 500µA
- Supplier Device Package 8-SOP Advance (5x5)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status RoHS Compliant


