- Product Model NTD4960N-1G
- Brand Sanyo Semiconductor/onsemi
- RoHS No
- Description MOSFET N-CH 30V 8.9A/55A IPAK
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 0
Technical Details
- Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 8.9A (Ta), 55A (Tc)
- Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V
- Power Dissipation (Max) 1.07W (Ta), 35.71W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package IPAK
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 30 V
- Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 15 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


