- Product Model SSM6J53FE(TE85L,F)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET P-CH 20V 1.8A ES6
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 0
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
- Rds On (Max) @ Id, Vgs 136mOhm @ 1A, 2.5V
- Power Dissipation (Max) 500mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- Drive Voltage (Max Rds On, Min Rds On) 1.5V, 2.5V
- Vgs (Max) ±8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 10.6 nC @ 4 V
- Input Capacitance (Ciss) (Max) @ Vds 568 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


