- Product Model IRF8513TRPBF
- Brand IR (Infineon Technologies)
- RoHS No
- Description MOSFET 2N-CH 30V 8A/11A 8SO
- Categories Массивы полевых транзисторов, МОП-транзисторов
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- In Stock 0
Technical Details
- Package / Case 8-SOIC (0.154", 3.90mm Width)
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1.5W, 2.4W
- Drain to Source Voltage (Vdss) 30V
- Current - Continuous Drain (Id) @ 25°C 8A, 11A
- Input Capacitance (Ciss) (Max) @ Vds 766pF @ 15V
- Rds On (Max) @ Id, Vgs 15.5mOhm @ 8A, 10V
- Gate Charge (Qg) (Max) @ Vgs 8.6nC @ 4.5V
- FET Feature Logic Level Gate
- Vgs(th) (Max) @ Id 2.35V @ 25µA
- Supplier Device Package 8-SO
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


