- Product Model A5G35H120NT2
- Brand NXP Semiconductors
- RoHS Yes
- Description RF MOSFET GAN 48V 10DFN
- Categories РЧ полевые транзисторы, МОП-транзисторы
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- In Stock 0
Technical Details
- Package / Case 10-PowerLDFN
- Mounting Type Surface Mount
- Frequency 3.3GHz ~ 3.7GHz
- Power - Output 18W
- Gain 14.1dB
- Technology GaN
- Supplier Device Package 10-DFN (7x10)
- Voltage - Rated 125 V
- Voltage - Test 48 V
- Current - Test 70 mA
- ECCN EAR99
- HTSUS 8541.29.0075
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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