Technical Details
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Package / Case
Module
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Mounting Type
Chassis Mount
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Configuration
4 N-Channel
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Operating Temperature
-40°C ~ 175°C (TJ)
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Technology
Silicon Carbide (SiC)
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Power - Max
74W (Tj)
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Drain to Source Voltage (Vdss)
1200V (1.2kV)
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Current - Continuous Drain (Id) @ 25°C
30A (Tc)
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Input Capacitance (Ciss) (Max) @ Vds
1505pF @ 800V
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Rds On (Max) @ Id, Vgs
56mOhm @ 25A, 20V
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Gate Charge (Qg) (Max) @ Vgs
122.1nC @ 20V
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Vgs(th) (Max) @ Id
4.3V @ 10mA
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Supplier Device Package
22-PIM (33.8x42.5)
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ECCN
EAR99
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HTSUS
8541.29.0095
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Moisture Sensitivity Level (MSL)
Not Applicable
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REACH Status
REACH Unaffected
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RoHS Status
ROHS3 Compliant
Related Products
SIC 2N-CH 1200V 51A
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