- Product Model PJW1NA60A_R2_00001
- Brand PANJIT
- RoHS Yes
- Description 600V N-CHANNEL MOSFET
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 0
Technical Details
- Package / Case TO-261-4, TO-261AA
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 400mA (Ta)
- Rds On (Max) @ Id, Vgs 7.9Ohm @ 500mA, 10V
- Power Dissipation (Max) 3.3W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package SOT-223
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs (Max) ±30V
- Drain to Source Voltage (Vdss) 600 V
- Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 148 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


