- Product Model TK6R9P08QM,RQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description UMOS10 DPAK 80V 6.9MOHM
- Categories Одиночные полевые транзисторы, МОП-транзисторы
- In Stock 5609
Technical Details
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 62A (Tc)
- Rds On (Max) @ Id, Vgs 6.9mOhm @ 31A, 10V
- Power Dissipation (Max) 89W (Tc)
- Vgs(th) (Max) @ Id 3.5V @ 500µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 80 V
- Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 40 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


