Technical Details

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 5.5A (Ta)
• Rds On (Max) @ Id, Vgs 37mOhm @ 5.5A, 4.5V
• Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
• Vgs(th) (Max) @ Id 900mV @ 250µA
• Supplier Device Package DFN1010B-6
• Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
• Vgs (Max) ±12V
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 23 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1575 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095