Technical Details

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1W (Ta), 2.2W (Tc), 1W (Ta), 2.5W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 13A (Ta), 24A (Tc), 18A (Ta), 60A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1605pF @ 15V, 2060pF @ 15V
• Rds On (Max) @ Id, Vgs 10mOhm @ 13A, 10V, 5mOhm @ 18A, 10V
• Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V, 34nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 2.7V @ 250µA, 2.5V @ 1mA
• Supplier Device Package 8-PQFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant