- Product Model XPN9R614MC,L1XHQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET P-CH 40V 40A 8TSON
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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PDF
- In Stock 13147
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 40A (Ta)
- Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
- Power Dissipation (Max) 840mW (Ta), 100W (Tc)
- Vgs(th) (Max) @ Id 2.1V @ 500µA
- Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) +10V, -20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


