- Product Model TPN11006PL,LQ
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS No
- Description MOSFET N-CH 60V 26A 8TSON
- Categories Одиночные полевые транзисторы, МОП-транзисторы
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- In Stock 9967
Technical Details
- Package / Case 8-PowerVDFN
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 26A (Tc)
- Rds On (Max) @ Id, Vgs 11.4mOhm @ 13A, 10V
- Power Dissipation (Max) 610mW (Ta), 61W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 200µA
- Supplier Device Package 8-TSON Advance (3.1x3.1)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 60 V
- Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 1625 pF @ 30 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


