- Product Model RN1911,LF(CT
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description NPNX2 BRT Q1BSR10KOHM Q1BERINF.K
- Categories Биполярные транзисторные матрицы с предварительным смещением
- In Stock 0
Technical Details
- Package / Case 6-TSSOP, SC-88, SOT-363
- Mounting Type Surface Mount
- Transistor Type 2 NPN - Pre-Biased (Dual)
- Power - Max 100mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
- Frequency - Transition 250MHz
- Resistor - Base (R1) 10kOhms
- Supplier Device Package US6
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


