- Product Model RN1706,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description NPNX2 BRT Q1BSR4.7KOHM Q1BER47KO
- Categories Биполярные транзисторные матрицы с предварительным смещением
- In Stock 6563
Technical Details
- Package / Case 5-TSSOP, SC-70-5, SOT-353
- Mounting Type Surface Mount
- Transistor Type 2 NPN - Pre-Biased (Dual)
- Power - Max 200mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 50V
- Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max) 500nA
- DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
- Frequency - Transition 250MHz
- Resistor - Base (R1) 4.7kOhms
- Resistor - Emitter Base (R2) 47kOhms
- Supplier Device Package USV
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


