- Product Model SSM6L14FE(TE85L,F)
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description MOSFET N/P-CH 20V 0.8A ES6
- Categories Массивы полевых транзисторов, МОП-транзисторов
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PDF
- In Stock 5619
Technical Details
- Package / Case SOT-563, SOT-666
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- Power - Max 150mW (Ta)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 800mA (Ta), 720mA (Ta)
- Input Capacitance (Ciss) (Max) @ Vds 90pF @ 10V, 110pF @ 10V
- Rds On (Max) @ Id, Vgs 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 2nC @ 4.5V, 1.76nC @ 4.5V
- FET Feature Logic Level Gate, 1.5V Drive
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package ES6
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


