- Product Model MT3S111TU,LF
- Brand Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- Description RF SIGE NPN BIPOLAR TRANSISTOR N
- Categories Биполярные радиочастотные транзисторы
-
PDF
- In Stock 11670
Technical Details
- Package / Case 3-SMD, Flat Lead
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Gain 12.5dB
- Power - Max 800mW
- Current - Collector (Ic) (Max) 100mA
- Voltage - Collector Emitter Breakdown (Max) 6V
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 30mA, 5V
- Frequency - Transition 10GHz
- Noise Figure (dB Typ @ f) 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
- Supplier Device Package UFM
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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