技术参数

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 390mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 1.1A, 700mA
• Input Capacitance (Ciss) (Max) @ Vds 65.9pF @ 25V
• Rds On (Max) @ Id, Vgs 460mOhm @ 200mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 0.9nC @ 4.5V
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package X2-DFN1310-6 (Type B)
• Grade Automotive
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant