技术参数

• Package / Case 6-XFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 265mW
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 600mA, 500mA
• Input Capacitance (Ciss) (Max) @ Vds 21.3pF @ 10V
• Rds On (Max) @ Id, Vgs 620mOhm @ 600mA, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 0.7nC @ 4.5V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package DFN1010B-6
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant