技术参数

• Package / Case DirectFET™ Isometric SA
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.7W (Ta), 21W (Tc)
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 16A (Ta), 57A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1350pF @ 13V
• Rds On (Max) @ Id, Vgs 4.2mOhm @ 16A, 10V
• Gate Charge (Qg) (Max) @ Vgs 13nC @ 4.5V
• Vgs(th) (Max) @ Id 2.1V @ 35µA
• Supplier Device Package DirectFET™ Isometric SA
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status Not applicable