Technical Details

• Package / Case 3-XDFN Exposed Pad
• Mounting Type Surface Mount
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max) 1µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V
• Supplier Device Package DFN1010D-3
• Grade Automotive
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 280 mW
• Frequency - Transition 230 MHz
• Resistor - Base (R1) 2.2 kOhms
• Resistor - Emitter Base (R2) 47 kOhms
• Qualification AEC-Q101