- Product Model BSM300D12P2E001
- Brand ROHM Semiconductor
- RoHS Yes
- Description SIC 2N-CH 1200V 300A MODULE
- Classification FET, MOSFET Arrays
-
PDF
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 1875W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 300A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 35000pF @ 10V
- Vgs(th) (Max) @ Id 4V @ 68mA
- Supplier Device Package Module
Related Products
SIC 2N-CH 1200V 80A MODULE
Inventory: 15
MOSFET 2N-CH 1200V 120A MODULE
Inventory: 13
SIC 2N-CH 1200V 204A MODULE
Inventory: 0
SIC 2N-CH 1200V 180A MODULE
Inventory: 1
SIC 2N-CH 1700V 250A MODULE
Inventory: 31
SIC 2N-CH 1200V 600A MODULE
Inventory: 4
SIC 2N-CH 1200V 200A
Inventory: 17
MOSFET 2 N-CH 1200V MODULE
Inventory: 8
SIC 2N-CH 1200V 450A MODULE
Inventory: 351
SIC 6N-CH 1200V 51A MODULE
Inventory: 59
