- Product Model BSM180D12P3C007
- Brand ROHM Semiconductor
- RoHS Yes
- Description SIC 2N-CH 1200V 180A MODULE
- Classification FET, MOSFET Arrays
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Technical Details
- Package / Case Module
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 880W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
- Vgs(th) (Max) @ Id 5.6V @ 50mA
- Supplier Device Package Module
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