Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 10mW
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 141A (Tj)
• Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 1000V
• Rds On (Max) @ Id, Vgs 13.9mOhm @ 150A, 15V
• Gate Charge (Qg) (Max) @ Vgs 354nC @ 15V
• Vgs(th) (Max) @ Id 3.9V @ 34mA
• Supplier Device Package Module