Technical Details

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 6 N-Channel (3-Phase Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 51A (Tj)
• Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 800V
• Rds On (Max) @ Id, Vgs 27.9mOhm @ 30A, 15V
• Gate Charge (Qg) (Max) @ Vgs 162nC @ 15V
• Vgs(th) (Max) @ Id 3.6V @ 17.7mA
• Supplier Device Package Module