- Product Model BSM300D12P4G101
- Brand ROHM Semiconductor
- RoHS No
- Description SIC 2N-CH 1200V 291A MODULE
- Classification FET, MOSFET Arrays
-
PDF
Technical Details
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 925W (Tc)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 291A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 30000pF @ 10V
- Vgs(th) (Max) @ Id 4.8V @ 145.6mA
- Supplier Device Package Module
Related Products
SIC 4N-CH 1200V 50A ACEPACK1
Inventory: 0
SIC 2N-CH 1200V 204A MODULE
Inventory: 0
SIC 2N-CH 1200V 300A MODULE
Inventory: 26
SIC 2N-CH 1200V 400A MODULE
Inventory: 4
SIC 2N-CH 1200V 400A MODULE
Inventory: 2
SIC 2N-CH 1200V 600A MODULE
Inventory: 4
SIC 2N-CH 1200V 200A MODULE
Inventory: 0
SIC 1700V 320A MODULE
Inventory: 0
ELITESIC, 3 MOHM SIC M3S MOSFET,
Inventory: 32
SIC 1700V 310A
Inventory: 5
