技术参数
- Mounting Type Through Hole
- Transistor Type NPN
- Operating Temperature -65°C ~ 150°C (TJ)
- Power - Max 350mW
- Voltage - Collector Emitter Breakdown (Max) 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
- Frequency - Transition 650MHz
- ECCN EAR99
- HTSUS 8541.21.0075
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
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