技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Power - Max 350mW
• Voltage - Collector Emitter Breakdown (Max) 25V
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 4mA, 10V
• Frequency - Transition 650MHz
• Supplier Device Package TO-92-3
• ECCN EAR99
• HTSUS 8542.39.0001