技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type PNP - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
• Supplier Device Package NS-B1
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 300 mW
• Frequency - Transition 80 MHz
• Resistor - Base (R1) 10 kOhms
• Resistor - Emitter Base (R2) 47 kOhms
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)