技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V
• Supplier Device Package TO-92 (TO-226)
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 350 mW
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 47 kOhms
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Affected
• RoHS Status RoHS non-compliant