- 产品型号 BSM080D12P2C008
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 SIC 2N-CH 1200V 80A MODULE
- 分类 FET、MOSFET 阵列
-
PDF
- 库存 1515
技术参数
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 600W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 800pF @ 10V
- Vgs(th) (Max) @ Id 4V @ 13.2mA
- Supplier Device Package Module
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


