- 产品型号 BSM180D12P3C007
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 SIC 2N-CH 1200V 180A MODULE
- 分类 FET、MOSFET 阵列
-
PDF
- 库存 1501
技术参数
- Package / Case Module
- Mounting Type Surface Mount
- Configuration 2 N-Channel (Dual)
- Operating Temperature 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Power - Max 880W
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 900pF @ 10V
- Vgs(th) (Max) @ Id 5.6V @ 50mA
- Supplier Device Package Module
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


