- 产品型号 EFC6605R-V-TR
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 MOSFET 2N-CH 20V 10A 6EFCP
- 分类 FET、MOSFET 阵列
-
PDF
- 库存 6500
技术参数
- Package / Case 6-SMD, No Lead
- Mounting Type Surface Mount
- Configuration 2 N-Channel
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- Power - Max 1.6W (Ta)
- Drain to Source Voltage (Vdss) 20V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta)
- Rds On (Max) @ Id, Vgs 13.3mOhm @ 3A, 4.5V
- Gate Charge (Qg) (Max) @ Vgs 19.8nC @ 4.5V
- FET Feature Logic Level Gate, 2.5V Drive
- Vgs(th) (Max) @ Id 1.3V @ 1mA
- Supplier Device Package 6-EFCP (1.9x1.46)
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


