技术参数
- Package / Case Die
- Mounting Type Surface Mount
- Operating Temperature -40°C ~ 150°C (TJ)
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4A (Ta)
- Rds On (Max) @ Id, Vgs 130mOhm @ 500mA, 5V
- Vgs(th) (Max) @ Id 2.5V @ 250µA
- Supplier Device Package Die
- Drive Voltage (Max Rds On, Min Rds On) 5V
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 65 V
- Gate Charge (Qg) (Max) @ Vgs 0.45 nC @ 5 V
- Input Capacitance (Ciss) (Max) @ Vds 52 pF @ 32.5 V
- ECCN EAR99
- HTSUS 8541.29.0040
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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