技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 1.7A
• Input Capacitance (Ciss) (Max) @ Vds 75pF @ 50V
• Rds On (Max) @ Id, Vgs 70mOhm @ 2A, 5V
• Gate Charge (Qg) (Max) @ Vgs 0.73nC @ 5V
• Vgs(th) (Max) @ Id 2.5V @ 600µA
• Supplier Device Package Die
• ECCN EAR99
• HTSUS 8541.29.0040
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant