技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 6 N-Channel (3-Phase Bridge)
• Operating Temperature 150°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 337W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 87A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2810pF @ 800V
• Rds On (Max) @ Id, Vgs 34mOhm @ 50A, 20V
• Gate Charge (Qg) (Max) @ Vgs 180nC @ 20V
• Vgs(th) (Max) @ Id 2.3V @ 2.5mA
• Supplier Device Package Module
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant