技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 6 N-Channel (3-Phase Bridge)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 395W (Tc)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 89A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
• Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
• Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
• Vgs(th) (Max) @ Id 2.8V @ 1mA
• Supplier Device Package SP3F
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) Not Applicable
• REACH Status REACH Unaffected