技术参数

• Package / Case 8-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Configuration 2 N-Channel (Dual) Matched Pair
• Operating Temperature 0°C ~ 70°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 500mW
• Drain to Source Voltage (Vdss) 10.6V
• Current - Continuous Drain (Id) @ 25°C 80mA
• Input Capacitance (Ciss) (Max) @ Vds 30pF @ 5V
• Rds On (Max) @ Id, Vgs 14Ohm
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 20mV @ 20µA
• Supplier Device Package 8-PDIP
• California Prop 65 California Prop 65 Information
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant