技术参数

• Package / Case 16-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Configuration 4 N-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 500mW (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 50mA (Ta)
• Rds On (Max) @ Id, Vgs 70Ohm @ 1mA, 5V
• Vgs(th) (Max) @ Id 1.5V @ 1µA
• Supplier Device Package 16-DIP
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant