技术参数

• Package / Case 3-ESIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2V @ 800mA, 8A
• Current - Collector Cutoff (Max) 100µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 8V, 4V
• Frequency - Transition 50MHz
• Supplier Device Package MT-200
• Current - Collector (Ic) (Max) 17 A
• Voltage - Collector Emitter Breakdown (Max) 180 V
• Power - Max 200 W
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• RoHS Status RoHS Compliant