技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
• Current - Collector Cutoff (Max) 5µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A, 5V
• Frequency - Transition 30MHz
• Supplier Device Package TO-3P
• Current - Collector (Ic) (Max) 17 A
• Voltage - Collector Emitter Breakdown (Max) 250 V
• Power - Max 130 W
• ECCN EAR99
• HTSUS 8541.29.0075