- 产品型号 G2K3N10L6
- 品牌 Goford Semiconductor
- RoHS Yes
- 描述 MOSFET 2N-CH 100V 3A SOT23-6L
- 分类 FET、MOSFET 阵列
-
PDF
- 库存 4500
技术参数
- Package / Case SOT-23-6
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1.67W (Tc)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 3A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 536pF @ 50V
- Rds On (Max) @ Id, Vgs 220mOhm @ 2A, 10V
- Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V
- Vgs(th) (Max) @ Id 2.2V @ 250µA
- Supplier Device Package SOT-23-6L
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)
- REACH Status REACH Unaffected
- RoHS Status RoHS Compliant


